Norint padidinti 20% tranzistoriaus tankį, „AMD Zen3“ ​​padidins 7 nm ir EUV



AMD 'Zen 3' microarchitecture could be designed for the enhanced 7 nm+ EUV (extreme ultraviolet) silicon fabrication node at TSMC, which promises a significant 20 percent increase in transistor densities compared to the 7 nm DUV (deep ultraviolet) node on which its 'Zen 2' processors are being built. In addition, the node will also reduce power consumption by up to 10 percent at the same operational load. In a late-2018 interview, CTO Mark Papermaster stated AMD's design goal with 'Zen 3' would be to prioritize energy-efficiency, and that it would present 'modest' performance improvements (read: IPC improvements) over 'Zen 2.' AMD made it clear that it won't drag 7 nm DUV over more than one microarchitecture (Zen 2), and that 'Zen 3' will debut in 2020 on 7 nm+ EUV.
Source: PCGamesN